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Band Structure Engineering in Semiconductor Microstructures
  • Language: en
  • Pages: 383

Band Structure Engineering in Semiconductor Microstructures

This volume contains the proceedings of the NATO Advanced Research Workshop on Band Structure Engineering in Semiconductor Microstructures held at Il Ciocco, Castelvecchio Pascali in Tuscany between 10th and 15th April 1988. Research on semiconductor microstructures has expanded rapidly in recent years as a result of developments in the semiconductor growth and device fabrication technologies. The emergence of new semiconductor structures has facilitated a number of approaches to producing systems with certain features in their electronic structure which can lead to useful or interesting properties. The interest in band structure engineering has stimd ated a variety of physical investigations and nove 1 device concepts and the field now exhibits a fascinating interplay betwepn pure physics and device technology. Devices based on microstruc tures are useful vehicles for fundamental studies but also new device ideas require a thorough understanding of the basic physics. Around forty researchers gathered at I1 Ciocco in the Spring of 1988 to discuss band structure engineering in semiconductor microstructures.

Molecular Beam Epitaxy and Heterostructures
  • Language: en
  • Pages: 718

Molecular Beam Epitaxy and Heterostructures

The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova tions. The emergence of a process, on th...

Optical Properties of Semiconductors
  • Language: en
  • Pages: 327

Optical Properties of Semiconductors

It is widely recognized that an understanding of the optical pro perties of matter will give a great deal of important information re levant to the fundamental physical properties. This is especially true in semiconductor physics for which, due to the intrinsic low screening of these materials, the optical response is quite rich. Their spectra reflect indeed as well electronic as spin or phonon transitions. This is also in the semiconductor field that artificial structures have been recently developed, showing for the first time specific physical properties related to the low dimentionality of the electronic and vi bronic properties : with this respect the quantum and fractional quan tum Hal...

Physics of Low-Dimensional Semiconductor Structures
  • Language: en
  • Pages: 597

Physics of Low-Dimensional Semiconductor Structures

Presenting the latest advances in artificial structures, this volume discusses in-depth the structure and electron transport mechanisms of quantum wells, superlattices, quantum wires, and quantum dots. It will serve as an invaluable reference and review for researchers and graduate students in solid-state physics, materials science, and electrical and electronic engineering.

Spectroscopy of Semiconductor Microstructures
  • Language: en
  • Pages: 661

Spectroscopy of Semiconductor Microstructures

Proceedings of a NATO ARW held in Venice, Italy, May 9-13, 1989

Optical Properties of Semiconductors
  • Language: en
  • Pages: 884

Optical Properties of Semiconductors

1st edition (1980) published as Optical properties of solids

Landau Level Spectroscopy
  • Language: en
  • Pages: 804

Landau Level Spectroscopy

  • Type: Book
  • -
  • Published: 1991
  • -
  • Publisher: Unknown

None

The Insurance register [formerly The Assurance register] by a fellow of the Statistical society [W. White].
  • Language: en
  • Pages: 200
Localization and Confinement of Electrons in Semiconductors
  • Language: en
  • Pages: 374