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The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis
Surface Properties of Electronic Materials is the fifth volume of the series, The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis. This volume indicates the present state of some basic properties of semiconductor surfaces. Chapter one summarizes the general problems in electronic materials and the areas affected by the surface science methods. The next two chapters illustrate the existing perception of the electronic and structural properties of elemental and compound semiconductor surfaces. This volume also deals with the properties of adsorption of semiconductors relating to both relevant gas phase species and metals. Chapters four to six of this volume explore compound semiconductors and elemental semiconductors. The remaining chapters of this volume explore the adsorption of metals on elemental semiconductors; aspects of growth kinetics and dynamics involved in molecular beam epitaxy; molecular beam epitaxy of silicon; insulators; and metastable phases. The last chapter covers the surface chemistry of dry etching processes.
III-Nitride Semiconductors
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structu...
Two-Dimensional Systems: Physics and New Devices
In the series of International Winter Schools on New Developments in Solid State Physics, the fourth one was devoted to the subject: "Two Dimensional Systems: Physics and Devices". For the second time the pro ceedings of one of these Winter Schools appear as a volume in the Springer Series in Solid-State Sciences (the earlier proceedings were published as Vol. 53). The school was held in the castle of MauterndorfjSalzburg (Austria) February 24-28, 1986. These proceedings contain contributions ba:sed on the thirty invited lectures. The school was attended by 179 registered participants (40% students), who came from western European countries, the United States of America, Japan, the People's ...
Semiconductor Surfaces and Interfaces
Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces to the general aspects of space-charge layers, of clean-surface and adatom-induced surface states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts and models. Where available, resutls of more refined calculations are considered. A final chapter is devoted to the band lineup at semiconductor interfaces.
Basic Properties of Semiconductors
Hardbound. Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title.Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form.The first three chapters discuss various aspects of modern band theory and the next two analyze impurities in semiconductors. Then follow chapters on semiconductor statistics and on surfaces, interfaces and band offsets as they occur in heterojunctions. Chapters 8 to 19 report on newer topics (though a survey of transport properties of carriers is also included). Among these are transport of hot electrons, and
