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Power GaN Devices
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for mas...
Radiotracer Studies of Interfaces
Radiotracer Studies of Interfaces presents a selection of examples illustrating the application of radiotracer studies for different types of interfaces. The value of radiotracer studies in fields such as food chemistry, corrosion of metals, neurochemistry, biology and catalysis is revealed. Separate chapters are devoted to the environmental problems connected with nuclear reactors and with the nuclear industry in general. The book also presents efforts to minimize and avoid the risk of radioactive contamination in the environment by describing new approaches to the problem. - Demonstrates the use of radiotracers - Contains a detailed discussion of double-layer phenomena - Separate chapters are devoted to the most important branches of science where radiotracer study of interfacial phenomena plays an important role
III-Nitride Electronic Devices
III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. - Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas – RF and power electronics - Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies - Written by a panel of academic and industry experts in each field
