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Atomic Force Microscopy Investigations into Biology
The atomic force microscope (AFM) has become one of the leading nanoscale measurement techniques for materials science since its creation in the 1980's, but has been gaining popularity in a seemingly unrelated field of science: biology. The AFM naturally lends itself to investigating the topological surfaces of biological objects, from whole cells to protein particulates, and can also be used to determine physical properties such as Young's modulus, stiffness, molecular bond strength, surface friction, and many more. One of the most important reasons for the rise of biological AFM is that you can measure materials within a physiologically relevant environment (i.e. liquids). This book is a collection of works beginning with an introduction to the AFM along with techniques and methods of sample preparation. Then the book displays current research covering subjects ranging from nano-particulates, proteins, DNA, viruses, cellular structures, and the characterization of living cells.
Towards an Adaptable Millimeter Wave Reflector
Presenting the latest developments in telecommunication and millimeter technology, this reference explains how recent research should be used for creating adaptable designs and applications, and offers alternative telecommunication technology for achieving an adaptable millimeter wave reflector imaging system. A discussion of an adaptable reflector that can be integrated in a wave-imaging system to reduce noise is also included.
HeteroSiC & WASMPE 2013
Selected, peer reviewed papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France
TMS 2021 150th Annual Meeting & Exhibition Supplemental Proceedings
This collection presents papers from the 150th Annual Meeting & Exhibition of The Minerals, Metals & Materials Society.
Silicon Carbide and Related Materials 1995, Proceedings of the Sixth INT Conference, Kyoto, Japan, 18-21 September 1995
The special advantages of silicon carbide and related materials such as III-V nitrides in applications in hostile environments and for blue-light-emitting diodes continue to stimulate research and development activity. The International Conference on Silicon Carbide and related Materials is now the established forum for exchanging information on advances in this subject. This volume includes both invited and contributed papers covering the whole field of silicon carbide and related materials research, from the fundamental physics of these materials, through their growth, control of properties, characterization, surface and interface modification, device processing and fabrication, to simulation and modelling. Materials scientists, electronic engineers and solid state physicists who work with these materials, as well as those who are contemplating research in this expanding field, will find this a unique single source of information.
Fundamentals of Nanoindentation and Nanotribology IV: Volume 1049
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book is a snapshot of the state of the art in nanoindentation and nanotribology, and highlights emerging topics including the development of new methods for characterizing nanoscale mechanical and tribological properties.
Wide-Bandgap Electronic Devices: Volume 622
Interest in wide-bandgap semiconductors for high-power/high-temperature electronics remains prominent. For such applications, SiC is by far the most mature semiconductor material. GaN and diamond, however, have also become prime candidates. While diamond has several advantages over the other two materials, producing large single crystals, as well as the inability to achieve n-type doping, have limited device fabrication. For GaN, recent advances in crystal growth and processing capabilities, as well as excellent transport properties, have yielded a great deal of device development, yet thermal conduction remains an issue. SiC has excellent thermal conductivity, high-breakdown voltages, and well-developed substrates and processing techniques. This book deals with a wide range of technical activity in the area of wide-bandgap high-power/high-temperature electronic devices and covers topics including the fabrication and performance of GaN-based and SiC-based devices, as well as issues related to growth, characterization, and processing of wide-bandgap materials. Several summaries of the current status of the field are provided.
