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A tech insider who has been hailed by The New Yorker for her “forceful critique” of Big Tech describes what must be done to stop its erosion of democracy Over the past decades, under the cover of “innovation,” technology companies have successfully resisted regulation and have even begun to seize power from governments themselves. Facial recognition firms track citizens for police surveillance. Cryptocurrency has wiped out the personal savings of millions and threatens the stability of the global financial system. Spyware companies sell digital intelligence tools to anyone who can afford them. This new reality—where unregulated technology has become a forceful instrument for autocr...
Modern electronic devices rely on ever-greater miniaturization of components, and semiconductor processing is approaching the domain of nanotechnology. Studies of devices in this regime can only be carried out with the most advanced forms of microscopy. Accordingly, Microscopy of Semiconducting Materials focuses on international developments in semiconductor studies carried out by all forms of microscopy. It provides an overview of the latest instrumentation, analysis techniques, and state-of-the-art advances in semiconducting materials science for solid state physicists, chemists, and material scientists.
The ESSDERC conference constitutes the major European forum for discussing research and development work on semiconductor devices and technology. The 141 papers, including 17 invited papers, review subjects of recent interest or report on major coordinated research programs in Europe and Japan. The main focus of the contributions is on traditional silicon-based devices and technology, oriented towards integrated circuits. Papers are also included on micro- and optoelectronic devices based on 3-5 compound semiconductors, and the design and fabrication of semiconductor-based microsensors and microactuators. The volume will be an indispensable reference source to researchers from different but related areas, in promoting the exchange of experience and in emphasizing the unifying aspects of the wide interdisciplinary area of semiconductor science and technology.
Comprising the proceedings of an MRS symposium held in April of 1998, contributions in this volume are divided into ten sections: interconnection frontiers; aluminum interconnects; cobalt and other silicides; titanium silicide; MOSFET, source, drain, and interconnect engineering; copper interconnects and barriers; a poster session on advanced interconnects and contacts; contacts to compound semiconductor devices; novel interconnect materials and schemes; and diffusion barriers. Annotation copyrighted by Book News, Inc., Portland, OR
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These proceedings present current research on issues related to stress-induced phenomena in on-chip metal interconnects and solder joints. The volume will appeal to scientists, engineers, graduate students interested in research and development of microelectronic devices as well as technology integration, and semiconductor industry professionals and equipment suppliers.
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