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Theory of Transport Properties of Semiconductor Nanostructures
Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent develo...
Level Doubling Network and Ripple Correlation Control MPPT Algorithm for Grid-Connected Photovoltaic Systems
This book describes an original improvement in power quality of photovoltaic generation systems obtained by the use of a multilevel inverter implemented with level doubling network (LDN). Modulation principles and harmonic analysis of output voltages are proposed and introduced in detail for both single and three-phase LDN configurations. The analysis is then extended to dc-link current and voltage, with emphasis to low-frequency harmonics and switching frequency ripple. This work represents the first comprehensive implementation of maximum power point tracking (MPPT) schemes using the ripple correlation control (RCC) algorithm in the presence of multiple ripple harmonics, such as in the case of multilevel inverters. Numerical simulations and experimental tests are carefully reported here, together with practical insights into the design of dc-link capacitors.
CMOS Cantilever Sensor Systems
This book introduces the use of industrial CMOS processes to produce arrays of nanomechanical cantilever transducers with on-chip driving and signal conditioning circuitry. These cantilevers are familiar from Scanning Probe Microscopy (SPM) and allow the sensitive detection of physical quantities such as forces and mass changes. The book is divided into three parts. First fabrication aspects and the mechanisms of cantilever resonators are introduced. Of the possible driving and sensing mechanisms, electrothermal and magnetic excitation, as well as piezoresistive detection and the use of MOS transistors for the deflection detection are introduced. This is followed by two application examples: The use of resonant cantilevers for the mass-sensitive detection of volatile organic compounds, and force sensor arrays for parallel Scanning Atomic Force Microscopy (AFM) of large areas.
Transport in Transition Regimes
IMA Volumes 135: Transport in Transition Regimes and 136: Dispersive Transport Equations and Multiscale Models focus on the modeling of processes for which transport is one of the most complicated components. This includes processes that involve a wide range of length scales over different spatio-temporal regions of the problem, ranging from the order of mean-free paths to many times this scale. Consequently, effective modeling techniques require different transport models in each region. The first issue is that of finding efficient simulations techniques, since a fully resolved kinetic simulation is often impractical. One therefore develops homogenization, stochastic, or moment based subgrid models. Another issue is to quantify the discrepancy between macroscopic models and the underlying kinetic description, especially when dispersive effects become macroscopic, for example due to quantum effects in semiconductors and superfluids. These two volumes address these questions in relation to a wide variety of application areas, such as semiconductors, plasmas, fluids, chemically reactive gases, etc.
Physics of Semiconductor Devices
This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.
