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Routledge Course in Modern Mandarin Chinese Level 2 Traditional
The Routledge Course in Mandarin Chinese is a two-year undergraduate course for students with no prior background in Chinese study. Designed to build a strong foundation in both the spoken and written language it develops all the basic skills such as pronunciation, character writing, word use and structures, while placing strong emphasis on the development of communicative skills. The complete course consists of Textbook Level 1, Workbook level 1 - including free CDs, Textbook level 2 and workbook level 2 -including free CDs. All books are available separately in simplified as well as traditional characters and take the students from complete beginner to post-intermediate level. Textbook Lev...
Routledge Course in Modern Mandarin Chinese Workbook 2 (Traditional)
The Routledge Course in Mandarin Chinese is a two-year undergraduate course for students with no prior background in Chinese study. Designed to build a strong foundation in both the spoken and written language it develops all the basic skills such as pronunciation, character writing, word use and structures, while placing strong emphasis on the development of communicative skills. The complete course consists of Textbook Level 1, Workbook level 1 - including downloadable resources, Textbook level 2 and Workbook level 2 -including downloadable resources. All books are available separately in simplified as well as traditional characters and take the students from complete beginner to post-inte...
Phase Change Memory
As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveying the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions to enable PCM for main memories. Finally, the authors explore the impact of such byte-addressable non-volatile memories on future storage and system designs. Table of Contents: Next Generation Memory Technologies / Architecting PCM for Main Memories / Tolerating Slow Writes in PCM / Wear Leveling for Durability / Wear Leveling Under Adversarial Settings / Error Resilience in Phase Change Memories / Storage and System Design With Emerging Non-Volatile Memories
A Reference Grammar of Chinese
Current, comprehensive and written by leading scholars, this corpus-based reference work is the definitive guide to Chinese grammar.
Free China Review
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Daily Report
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