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This book describes methods to address wearout/aging degradations in electronic chips and systems, caused by several physical mechanisms at the device level. The authors introduce a novel technique called accelerated active self-healing, which fixes wearout issues by enabling accelerated recovery. Coverage includes recovery theory, experimental results, implementations and applications, across multiple nodes ranging from planar, FD-SOI to FinFET, based on both foundry provided models and predictive models. Presents novel techniques, tested with experiments on real hardware; Discusses circuit and system level wearout recovery implementations, many of these designs are portable and friendly to the standard design flow; Provides circuit-architecture-system infrastructures that enable the accelerated self-healing for future resilient systems; Discusses wearout issues at both transistor and interconnect level, providing solutions that apply to both; Includes coverage of resilient aspects of emerging applications such as IoT.
This book provides an up to date survey of the state of the art of research into the materials used in information technology, and will be bought by researchers in universities, institutions as well as research workers in the semiconductor and IT industries.
This book presents the real challenges and experiences of managing an advanced semiconductor technology development and integration program – but using a novelized form. The material is presented in a conversational format through a story that follows a fictional narrator as she grows from an intern to a manager in a (fictional) chip company. The story describes the technology development program from management, engineering and human perspectives, and exposes not only the management and technical issues but also the typical work-life balance challenges experienced by engineers working in the technology industry. Use of a series of realistic and representative vignettes, supported by a set of illustrative cartoon-ish panels, presents the serious management topics in a light and readable way.
This book gathers the proceedings of the 10th International Conference on Frontier Computing, held in Singapore, on July 10–13, 2020, and provides comprehensive coverage of the latest advances and trends in information technology, science, and engineering. It addresses a number of broad themes, including communication networks, business intelligence and knowledge management, web intelligence, and related fields that inspire the development of information technology. The respective contributions cover a wide range of topics: database and data mining, networking and communications, web and Internet of things, embedded systems, soft computing, social network analysis, security and privacy, optical communication, and ubiquitous/pervasive computing. Many of the papers outline promising future research directions, and the book benefits students, researchers, and professionals alike. Further, it offers a useful reference guide for newcomers to the field.
Learn to assess electromigration reliability and design resilient chips, building from fundamental physics to advanced methodologies.
Continuing the spirit of the previous workshops, the proceedings contain new research results and advances in basic understanding of stress-induced phenomena in metallization. The current technology drive to implement low dielectric constant materials into copper metallization has brought new and significant challenges in process integration and reliability. Stresses arising in metallizations and surrounding dielectric structures due to thermal mismatch, electromigration, microstructure changes or process integration can lead to damage and failure of interconnect structures. Understanding stress-related phenomena in new materials and structures becomes critical for reliability improvement and metallization development. This is reflected in the papers included in the proceedings, which report results on electromigration, thermal stresses and void formation in copper-low k interconnect structures. The book also includes new results on fracture of low k dielectric structures, an important research area for reliability and integration of copper metallization.